Statistical model for the circuit bandwidth dependence of low-frequency noise in deep-submicrometer MOSFETs
AUTOR(ES)
Wirth, Gilson Inacio
DATA DE PUBLICAÇÃO
2011
RESUMO
This paper covers measurement, analytical analysis, and Monte Carlo simulation of the frequency and bandwidth dependence of MOSFET low-frequency (LF) noise behavior. The model is based on microscopic device physics parameters, which cause statistical variation in the LF noise behavior of individual devices. Analytical equations for the statistical parameters are provided. The analytical model is compared to experimental data and Monte Carlo simulation results.
ASSUNTO(S)
analog circuits microeletronica low-frequency (lf) noise circuitos analogicos mos transistors engenharia elétrica noise modeling simulação rf circuits mosfet variability
ACESSO AO ARTIGO
http://hdl.handle.net/10183/27583Documentos Relacionados
- Modeling of statistical low-frequency noise of deep-submicrometer MOSFETs
- Oxymetry deep in tissues with low-frequency electron paramagnetic resonance.
- Seismology and geodesy of the sun: Low-frequency oscillations
- Cognition-activated low-frequency modulation of light absorption in human brain.
- On the origin of low-frequency blood pressure variability in the conscious dog.
