Spin dynamics of electrons and holes in p-doped InAs/GaAs quantum dots
AUTOR(ES)
Braun, P.-F., Lombez, L., Marie, X., Urbaszek, B., Amand, T., Renucci, P., Gauffier, J.-L., Kalevich, V.K., Kavokin, K.V., Krebs, O., Voisin, P.
FONTE
Brazilian Journal of Physics
DATA DE PUBLICAÇÃO
2006-06
RESUMO
We have investigated the electron and hole spin dynamics in p-doped semiconductor InAs/GaAs quantum dots by time resolved photoluminescence. We observe a decay of the average electron spin polarisation down to 1/3 of its initial value with a characteristic time of TD » 500ps. We attribute this decay to the hyperfine interaction of the electron spin with randomly orientated nuclear spins. Magnetic field dependent studies reveal that this efficient spin relaxation mechanism can be suppressed by a field of the order of 100mT. In pump-probe like experiments we demonstrate that the resident hole spin, "written" with a first pulse, remains stable long enough to be "read" 15ns later with a second pulse.
Documentos Relacionados
- Anomalous blueshift in vertically coupled InAs/GaAs quantum dots using InGaAs strain-reducing layers
- Influence of annealing on the optical and electrical properties of multilayered InAs/GaAs quantum dots
- Effects of annealing on electrical and optical properties of a multilayer InAs/GaAs quantum dots system
- Hall effect in InAs/GaAs superlattices with quantum dots: identifying the presence of deep level defects
- Difração Bragg-Superfície no estudo de sistemas epitaxiais baseados em pontos quânticos de InAs/GaAs