Influence of annealing on the optical and electrical properties of multilayered InAs/GaAs quantum dots

AUTOR(ES)

Chiquito, A. J., Pusep, Yu. A., Mergulhão, S., Gobato, Y. Galvão, Galzerani, J. C.

FONTE

Brazilian Journal of Physics

DATA DE PUBLICAÇÃO

2002-06

RESUMO

The characteristics of multi-layered InAs/GaAs self assembled quantum dots (SAQDs) annealed after the growth were here studied using a combination of capacitance-voltage (C-V) measurements,Raman scattering and photoluminescence (PL) spectroscopy. The combination of the results obtained with the three techniques, gave evidences that the annealing at 500º C causes the sharpness of the SAQDs interfaces, while the annealing at 600º C eliminated the SAQDs. However, the comparison with the case of single layered SAQDs, revealed a thermal stability of the last system even at an annealing temperature of 700º C, thus confirming the role of the interlayer strain in the low temperature diffusion process.

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