Nanoestruturas e efeitos de tamanho na epitaxia de compostos III-V

AUTOR(ES)

Humberto Rodriguez Gutierrez

DATA DE PUBLICAÇÃO

2001

RESUMO

In this work we discuss issues related to two different methods to obtain epitaxially grown semiconductor nanostructures. The samples were grown by Chemical Beam Epitaxy (CBE) and characterized by High Resolution Transmission Electron Microscopy (HRTEM), Atomic Force Microscopy (AFM) and Reflection High-Energy Electron Diffraction (RHEED). In the first part of this work, we studied the changes in the morphology and growth mode of homoepitaxial InP/InP films due to a reduction in the growing area size. Scaling properties of the grown films were obtained by analyzing the behavior of the height-height correlation function and the height product correlation function. We show here that both the roughness exponent and the correlation length parallel to the surface change depending on the size of the area in which growth takes place. The second part of this thesis focused on the study of self-assembled nanostructures obtained in strained heteroepitaxial systems. In this case, we characterized the shape transition from quantum wires to quantum dots of InAs grown on InP substrates. We studied the influence of different parameters such as growth rate, growth time, substrate type (nominal or vicinal) and initial surface morphology on the formation of the InAs quantum wires. Our results suggest that the quantum wires are a metastable shape originated by the anisotropic diffusion over the InP buffer layer during the deposition of the first InAs monolayer. The wires evolve to a more stable shape (dot) during the sample annealing. The mechanisms originating this transition are discussed using a dynamic model existing in literature. We have also made an in-situ study by RHEED of the facets formation and evolution during the self-assembling process. These results are discussed within the same dynamic model. Finally we discuss the vertical organization of these nanostructures when multi-layered InAs/InP systems are grown

ASSUNTO(S)

cristais - crescimento epitaxia nanoestrutura materiais - microscopia

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