Camada epitaxial de INP : Zn Passivada por hidrogenio

AUTOR(ES)
DATA DE PUBLICAÇÃO

1998

RESUMO

This work is the first part of a project for the fabrication of low-dirnensional free carrier systems in semiconductors using hydrogen passivation. We present a systematic study of hydrogenation in InP:Zn epitaxiallayers. The para11el plate reactor was used to create a hydrogen plasma for hydrogenation of semiconductors. Zn passivation by hydrogen in lnP was studied in detail in order to obtain optimized condition. Characterization of hydrogenated samples was performed using CV -electrochemical and low temperature photoluminescence techniques. The reduction of carrier concentration, diffusion coefficient of H+ in InP:Zn, and other results related to hydrogenation are in agreement with reported results. We also studied in detail the effect of passivation in optical spectra. The behavior of donor-acceptor recombination involving interstitial Zn suggests a strong modulation of the potential profile. This is consider to be a consequence of the non-homogeneity of the impurity distribution and a strong compensation of the material due to the presence of Zn in deep donor state. The standart model for donor-acceptor recombination is not compatible with the results obtained in passivated samples. The experimental data also suggest that the interstitial Zn is passivated and the resulting binding energy of the deep donor is estimated to be approximately 20 me V

ASSUNTO(S)

semicondutores - propriedades oticas fosfeto de indio

ACESSO AO ARTIGO

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