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Mostrando 1-12 de 66 artigos, teses e dissertações.
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1. Identification of IgE and IgG1 specific antigens in Echinococcus granulosus cyst fluid
Cystic echinococcosis (CE) is an anthropozoonotic disease with worldwide distribution and is caused by the cestode Echinococcus granulosus. Anaphylactic shock induced by CE rupture is a serious complication especially in patients with hydatid infections, as the resulting leakage of fluid contains highly toxic endogenous antigen. We aimed to isolate and ident
Braz J Med Biol Res. Publicado em: 03/07/2017
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2. Analytical study of substrate parasitic effects in common-base and common-emitter SiGe BHT amplifiers
An analytical study to quantify the substrate parasitic effects on SiGe HBT amplifiers in both common-base and common-emitter configuration is presented. The power gain relations and stability factors are derived from the modelled S-parameters which are computed at a fixed bias point from the small-signal hybrid-∏ model of SiGe HBT in both configurations.
J. Microw. Optoelectron. Electromagn. Appl.. Publicado em: 2013-06
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3. In search of a tolerance-induction strategy for cow's milk allergies: significant reduction of beta-lactoglobulin allergenicity via transglutaminase/cysteine polymerization
OBJECTIVE: To explore the use of β-lactoglobulin polymerized using microbial transglutaminase and heating to identify whether protein polymerization could reduce in vivo allergenicity and maintain in vitro and ex vivo immunoreactivity for use in tolerance-induction protocols. METHODS: Based on previous protocols applied in mice and children, we performed in
Clinics. Publicado em: 2012-10
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4. Mycobacterium avium subsp. Paratuberculosis and the expression of selected virulence and pathogenesis genes in response to 6°c, 65°c and ph 2.0
The aim of this work was to study the expression of selected Mycobacterium avium subsp. paratuberculosis (MAP) genes connected with MAP virulence, adhesion and stress response. The temperature of 6°C and 65°C were chosen with regard to the food industry, storage conditions (refrigerator) and low-temperature pasteurization. A pH of 2.0, using lactic acid, w
Brazilian Journal of Microbiology. Publicado em: 2011-06
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5. Purificação de silicio metalurgico por fusão zonal horizontal em forno de feixe de eletrons / Purification of metallurgical silicon by horizontal zone melting in an electron beam furnace
The search for renewable energy sources has caused a boom in the production of solar cells in this decade, which rose from 0.3 GW in 2002 to 6.0 GW in 2008, totaling 37 billion dollars in 2008. The production of Electronic Grade Silicon (SiGE) increased 127% from 2007 to 2008, and approximately 90% of solar cells produced nowadays use SiGE, which is responsi
Publicado em: 2009
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6. Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem
We have used ab initio calculations to investigate the electronic structure of SiGe based nanocrystals (NCs). This work is divided in three parts. In the first one, we focus the excitonic properties of Si(core)/Ge(shell) and Ge(core)/Si(shell) nanocrystals. We also estimate the changes induced by the effect of strain the electronic structure. We show that Ge
Publicado em: 2008
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7. Characterization of the systems ChrR-sigmaR and CC3476-sigmaT in the responses to oxidative and osmotic stresses in C. crescentus / Caracterização dos sistemas ChrR-σR e CC3476σT na resposta de C. crescentus aos estresses oxidativo e osmótico
Caulobacter crescentus is among the bacteria whose genomes encode a high number of ECF sigma factors, which are involved in the transcriptional regulation of a limited set of genes in response to several environmental signals. In the present work, two ECF sigma factors from C. crescentus, σR e σT, were functionally characterized. Data showed that &
Publicado em: 2008
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8. Adoption, selection and implementation of free ERP. / Adoção, seleção e implementação de um ERP livre.
Na década de 90, os Sistemas ERP (Enterprise Resource Planning) alcançaram larga utilização, principalmente em empresas de grande porte, devido ao seu elevado custo. Em contrapartida, o interesse por sistemas livres data dos primeiros softwares desenvolvidos para computadores na década de 60 e 70 até os dias atuais com sistemas empresariais como os sis
Publicado em: 2008
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9. Relaxação estrutural de camadas pseudomórficas de SiGe/Si(100) induzida pela implantação iônica de He ou Si e tratamento térmico
O Si tensionado (sSi) é um material com propriedades de transporte eletrônico bastante superiores as do Si, sendo considerado como uma alternativa importante para a produção de dispositivos MOSFET (transistor de efeito de campo metal-óxido-semicondutor) de mais alta performance (e.g. freqüências de operação f>100 GHz). O sSi é obtido através do cr
Publicado em: 2007
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10. Cristalização do germanio amorfo pelo aluminio : caracterização por espectroscopia Raman / Aluminium induced crystallization of the amorphous germanium : characterization for Raman spectroscopy
This research work studies the microscopic mechanisms leading to the low-temperature crystallization of amorphous germanium (a-Ge) films induced by aluminum. The crystallization process was studied in Al-doped samples and also in multi-layer structures possessing an Al layer sandwiched between the substrate and the a-Ge film. In the case of Al-doped samples,
Publicado em: 2007
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11. Nanostructured materials of type IV and III-V doped with Mn. / Materiais nanoestruturados do tipo IV e III-V dopados com Mn
No presente trabalho, investigamos propriedades eletr^onicas, estruturais e de transporte de nanoestruturas do tipo IV e tipo III-V usando c´alculos de primeiros princ´?pios. (I) Como ponto de partida, verificamos sistematicamente a estabilidade do Mn substitucional nas camadas de Ge em uma heteroestrutura de Si/Ge. Estudamos a intera¸c~ao magn´etica Mn-
Publicado em: 2007
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12. Alloying in GeSi:Si (001) epitaxial nanocrystals / Formação de ligas em nanocristais epitaxiais de GeSi:Si (001)
The structural and electronic properties of nanoscale materials strongly depend on the chemical composition, as well as their size and shape. A big variety of morphologies can be achieved by controlling the experimental conditions during the epitaxial growth of Ge on a Si(001) substrate. In particular, three-dimensional islands with well defined size and sha
Publicado em: 2007