Gaasn
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1. Estudo de filmes finos de GaAS (1-x) Nx/GaAS por espectroscopia Raman e de Fotoluminescência
The dependence of nitrogen (N) concentration on optical properties in thermally treated and as grown thin films of GaAs1−xNx, with 0, 0144 x 0, 0370, is investigated through Raman spectroscopy and Photoluminescence. Raman spectra exhibits the presence of two GaAs1−xNx characteristic modes. A systematic decrease of the longitudinal optical GaAs-ty
Publicado em: 2008