Threshold shifting of nmos transitions by arsenic ion implantation prior to gate oxidation
AUTOR(ES)
Souza, Joel Pereira de
DATA DE PUBLICAÇÃO
2011
RESUMO
This paper reports on the threshold adjustment of NMOS transistors by arsenic ion implantation in the channel region directly into bare silicon just before the gate oxidation. Experimental results showed very good uniformity and reproducibility of the threshold voltages, low body effect, and high mobility values.
ASSUNTO(S)
fisica da materia condensada implantacao de ions oxidacao : silicio
ACESSO AO ARTIGO
http://hdl.handle.net/10183/27820Documentos Relacionados
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