The 2D ion D- in the presence of a magnetic fied using adiabatic method hyperspherical / O íon D- bidimensional na presença de um campo magnético pelo método adiabático hiperesférico

AUTOR(ES)

Antonio Sergio dos Santos

DATA DE PUBLICAÇÃO

2002

RESUMO

The adiabatic hyperspherical approach (HAA) is used to determine the energies and wave functions of the bound states of a negatively charged ion (D-), in the presence of a magnetic field, in semiconductors. Experimentally, the bound energy of this system is measured with the ion confined in quantum wells, or either, the system is quasi-two dimensional, but, in this work is used the theoretical approach in which the system is considered as being strict1y two dimensional. U sing a modified hyperspherical angular variable, potential curves are analytically obtained, allowing an accurate calculation of the energy levels of this system. The method allows to the determination of an upper and lower limit for the energies, whose values have been gotten by a nonadiabatic procedure. The results have comparable accuracy to the variational results found in literature.

ASSUNTO(S)

ion d- semiconductor microstructure método hiperesférico micro-estruturas hyperspherical method d- ion

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