Purificação de silicio grau metalurgico em forno de fusão por feixe de eletrons
AUTOR(ES)
Jose Carlos dos Santos Pires
DATA DE PUBLICAÇÃO
2000
RESUMO
ln this work, Electron Beam Melting (EBM) was used to purify the leached Metallurgical-Grade Silicon (MG-Si). This purification technique was begun in the Material Engineering Department in 1994 with fine results. From the leached MG-Si (99,97% in mass) it was obtained purity of 99,999%. From the better results, the goal was to improve the purification leveI. So, ITom the powder leached MG-Si (99,91% in mass), it was used two different ways ofmelting: static and dynamic (lateral feed) processes, besides more number of successive re-melting. It was made another melting of MG-Si stone without previous leaching. The chemical analysis showed that there wasn t difference between static and dynamic processes, the final results of both processes were very similar. As the dynamic process is more laborious in preparing the bar to be melted, so the static process is more practical and advantageous. The static process needs only two re melting to get the extraction impurity limito The melting of stone MG-Si showed to be more efficient since it eliminates the grinding and leaching stages besides the cut and weld used in the dynamic process
ASSUNTO(S)
lixiviação acida feixes de eletrons silicio - purificação
ACESSO AO ARTIGO
http://libdigi.unicamp.br/document/?code=vtls000195609Documentos Relacionados
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