Modelo teorico de laser DH de GaAs incluindo calculo auto-consistente de perfil de temperatura

AUTOR(ES)
DATA DE PUBLICAÇÃO

1980

RESUMO

In this work the temperature, carrier density, current density and gain profiles along the active region of a double-heterostructure GaAs - AlxGa1-xAs semiconductor laser have been investigated by a self-consistent iteractive rnethod developed in order to calculate these distributions. Current injection results in a temperature rise at the active region, which, in turn, entails changes in the profiles for the current and carrier densities and for the laser gain. In our calculations the iteraction was carried on until stationary distributions were reached. The refractive index profile of the active region was determined as a function of the final temperature and carrier distributions. The spatial distribution of the electromagnetic radiation for the fundamental laser mode was calculated. The behavior of these distributions during laser operation defines the threshold current, which dependence on the acti ve layer thickness and stripe width was also determined. We also carried on an experimental determination of the thermal resistance of stripe-geometry DH lasers, by varying the current pulse rate up to cw condition and determining the change in the laser wavelength of a selected Fabry-Perot mode. The measured value of thermal resistance is in excelent agreement with its calculated value. We also determined the temperature dependence of the dielectric constant from the measured spectral thermal shift of each Fabry-Perot mode as function of driving current

ASSUNTO(S)

lasers semicondutores lasers

ACESSO AO ARTIGO

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