Liquido de eletron-buraco em GaS

AUTOR(ES)
DATA DE PUBLICAÇÃO

1980

RESUMO

Photoluminescence measurements have been performed under high excitation levels and low temperatures (<10K) condition. This work aims to explain the appearance of a broad band which dominates the spectrum, upon passing from a low into a high excitation level. Its intensity is highly dependent of the excitation. When temperature is rised from 2 K up to 10 K the trend is to recover the low excitation level spectrum (discrete), the position of the band being independent of the excitation, e.g., remains constant. The interpretation assumed is the one that considers this band originated from the recombination of a electron-hole drop (EHD), as observed in other semiconductors (Si, Ge, GaP, etc.). The best fitting has been made and allows the obtainance of some characteristic EHD parameters: carriers concentration, renormalized gap energy, Fermi levels, chemical potential and condensation energy.

ASSUNTO(S)

semicondutores radiação luminescencia

ACESSO AO ARTIGO

Documentos Relacionados