Estudo de propriedades opticas e de transporte em estruturas semicondutoras em dopagem planar

AUTOR(ES)
DATA DE PUBLICAÇÃO

1993

RESUMO

In this work we investigated semiconductor microstructures which provide the confinement of photogenerated holes. In systems obtained by periodically doping a layer of homogeneous material (M-d), this confinement is evidenced as the spacing between the dopant plans decreases and quantum limit for holes is achieved. On the other hand, as far as electrons are concerned, when the period of these structures is shortened, the bidimensional character of a single d well changes to a tridimensional one, of a short period superlattice. Instead of a well defined level system, in short period structures, minibands with finite width will occur. Both the effects mentioned above can be clearly understood in terms of the drastic changes present in the photoluminescence and photo- luminescence excitation spectra, as a function of the decrease of the d-layer spacing. When a d-layer is introduced in the center of a quantum well, the confinement of both electrons and photogenerated holes is garanteed by the existence of the AlGaAs barriers. The emission band above the GaAs band-gap energy indicates that recombination processes, involving these carriers, have their probability strongly increased by the confinement

ASSUNTO(S)

espectroscopia de luminescencia semicondutores

ACESSO AO ARTIGO

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