Controle de caos em amostras semi-isolantes de arseneto de gálio

AUTOR(ES)

Samir Lacerda da Silva

DATA DE PUBLICAÇÃO

2008

RESUMO

Low frequency current oscillations have been usually investigated under the influence of the external applied bias, the temperature and the illumination. A parallel applied magnetic field has been used in the present work in order to obtain odd periodic windows and bifurcations inside them in a two dimension parameter space in a semi-insulating GaAs grown by molecular beam epitaxy. Two kinds of parameter spaces have been used in order to stabilize the odd periodic windows and the bifurcations, namely, the external applied bias versus the parallel magnetic field and the illumination versus the parallel magnetic field. We report on a successful observation of stable cycles of periodicity 3, 4, 5, 6, 7 and 8 inside a period-3 window. An example of bifurcation route is presented following the sequence from chaos to 4, 3, 6, 3, 5, 7, 5, and back to chaos in the parameter space of bias versus magnetic field. In this bifurcation route we will show which branch of the cycle is bifurcating and which are coalescing.

ASSUNTO(S)

arseneto de gálio semicondutores epitaxia por feixe molecular física teses

Documentos Relacionados

• Estudo das estruturas de discordâncias cristalinas em arseneto de gálio
• Difusão de enxofre em arseneto de galio por processamento termico rapido
• Influência do laser arseneto de gálio-alumínio em feridas cutâneas de ratos
• Uso do laser arseneto de gálio (904nm) após excisão artroplástica da cabeça do fêmur em cães
• Influence of the gallium arsenide laser and gallium aluminum arsenide laser and healing oitment in the cutaneous wounds in Wistar rats