Contribution to the study of ultra-sharp silicon microtips fabrication process / Contribuição ao estudo do processo de fabricação de microponteiras de silicio ultra-finas

AUTOR(ES)
DATA DE PUBLICAÇÃO

2007

RESUMO

In this work, we present a contribution to the study of ultra-sharp silicon microtips fabrication process using oxidation sharpening technique. The silicon microtips were fabricated and submitted to repeated oxidation steps and oxide strip to achieve ultra-sharp tips. SEM (Scaning Electronic Microscopy) investigation were performed to observe the gradual tip diameter reduction after each oxidation step. Before the oxidation sharpening process, the silicon microtips array had initially a tip diameter of 0,7 um, and after the process the tip diameter was found in 0,06 um. The tip diameter was reduced in 92 % without any significant reduction of its height, which was kept in 4,5 um. The oxidation rate was characterized as a function of the tip diameter. The results obtained are in agreement with the model proposed by Kao et al., which states that the oxidation rate is reduced as the tip diameter become smaller. We also observed that the oxidation rates in the tips are lower than oxidation rate in flat surface of silicon. Finally, we performed the electrical characterization of the silicon microtips. We calculate the FN emission parameters and analyzed the short term stability characteristics

ASSUNTO(S)

semiconductors silicio - oxidação engenharia eletrica - materiais silicon microtips field emission oxidation sharpening eletrons - emissão semicondutores

ACESSO AO ARTIGO

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