Characterization of PbTe p - n+ junction grown by molecular beam epitaxy
AUTOR(ES)
Barros, A.S., Abramof, E., Rappl, P.H.O., Ueta, A.Y., Closs, H.
FONTE
Brazilian Journal of Physics
DATA DE PUBLICAÇÃO
2004-06
RESUMO
In this work we investigate the electrical properties of PbTe p - n+ junction. Mesa diodes were fabricated from p - n+ PbTe layers grown on (111) BaF2 substrates by molecular beam epitaxy. From the analysis of the current versus voltage characteristic measured at 80K, the incremental differential resistance and the series resistance were determined. The capacitance versus voltage curves were measured at a frequency of 1MHz. The one-sided abrupt junction was checked through the 1/C²xV plot. From the linear fit, the hole concentration and the depletion layer width in the p-side were obtained. The high detectivity values measured for the p - n+ PbTe diode confirm that it is very suitable for infrared detection.
Documentos Relacionados
- Electrical properties of bi-doped PbTe layers grown by molecular beam epitaxy on BaF2 substrates
- Characterization of SnTe films grown by molecular beam epitaxy
- Estruturas de barreira dupla de PbTe/PbEuTe crescidas por epitaxia de feixe molecular
- Estruturas de barreira dupla de PbTe/PbEuTe crescidas por epitaxia de feixe molecular
- Electrical characterization of PbTe p-n junctions for applicarion in infrared detectors.
