Caracterização elétrica de capacitores obtidos através de tecnologia ultra-submicrométrica. / Electrical characterization of capacitors obtained through extreme-submicrometer technology.

AUTOR(ES)

Michele Rodrigues

DATA DE PUBLICAÇÃO

2006

RESUMO

In this work we present the study of polysilicon depletion and the gate tunneling current effects in thin-gate oxide devices. Characteristic curves of capacitance as a function of the gate voltage (C-V) were used to analyze the degradation caused for these effects. Regarding the poly depletion effect, a reduction of the total capacitance in the inversion region was verified as the polysilicon doping concentration decreases. This effect was observed in C-V curves in high and low frequency, being the last one more affected. The gate tunneling current presented an influence on the width of the depletion silicon region, which increased due to the carriers tunneling from the substrate. As a result, a reduction in the silicon capacitance was observed, causing the C-V curve reduction in the inversion region. When the polysilicon depletion effect is considered together with the tunneling effect, it was observed that there is a carriers excess in the gate region, causing a reduction of the polysilicon depletion region width. In this case, the C-V curve suffered a larger reduction, making difficult to separate both effects. The most affected characteristic was the C-V curve at low frequency, due to existence of the carrier response time that allows observing the influence of the tunneling current in inversion charges. A new method for the determination of the doping concentration of substrate and polysilicon was also presented, through C-V curves at high frequency. Two-dimensional simulations and experimental measurements were used to validate the method. The obtained results indicate that the propose method present a higher potential, having as principal advantage the simplicity of application.

ASSUNTO(S)

polysilicon depletion effect thin gate oxide c-v curve tunneling current two-dimensional simulation mos capacitor corrente de tunelamento mos Óxido de porta fino capacitor curva c-v efeito de depleção do si-poli simulação bidimensional

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