Bismuth doping of hydrogenated amorphous germanium

AUTOR(ES)

Florian Murmeister

DATA DE PUBLICAÇÃO

1998

RESUMO

t: The addition of small quantities of bismuth to hydrogenated amorphous germanium (a-Ge:H), changed its electrical conductivity and bandgap. Detailed data were obtained from measurements of electrical conductivity, optical and infrared transrnission, and from photothermal deflection spectroscopy. Films of a-Ge:H having Bi atomic concentrations ranging between 8x10-6 and 5.5x10-3 were deposited by co-sputtering from Ge and Bi targets in an rfplasma sputtering chamber. The Bi incorporation was found to produce small changes in the conductivity in the whole concentration range studied. No or small changes in the magnitude of the bandgap were observed. The Urbach energy remained constant. The hydrogen content was found to be constant in the whole concentration range studied. The room-temperature conductivity changed by one order of magnitude, less than by incorporation of other elements of group V. The Ferrni leveI changed by 0.1 e V and remained far from the conduction band edge. One can conclude that Bi is an inefficient dopant in a-Ge:H. The defect density remained practica1ly unchanged in the whole concentration range studied, which possibly is correlated with the low doping efficiency

ASSUNTO(S)

germanio - propriedades eletricas thin films filmes finos amorphous semiconductors germanium semicondutores amorfos

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