A JL-SDR-IMPATT Device with Improved Efficiency

AUTOR(ES)
FONTE

J. Microw. Optoelectron. Electromagn. Appl.

DATA DE PUBLICAÇÃO

2017-04

RESUMO

Abstract An attempt has been made to present a new device which will function as a highly efficient SDR (Single Drift Region) P+-N- N+ IMPATT diode utilizing the advantages of a junctionless field effect transistor. The basic idea is to convert a uniform N+ region into a (P+-N-N+) structure without any requirement of physical doping. As the present device works on the principle of a junctionless channel, variability and short channel effects are significantly reduced as compared to the conventional TFET though the requirement of an extra gate increases a few fabrication steps. Further, efficiency more than conventional SDR IMPATT diode is achievable without any physical doping.

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