A JL-SDR-IMPATT Device with Improved Efficiency
AUTOR(ES)
Bandyopadhyay, Dipan, Sarkar, Subir Kumar
FONTE
J. Microw. Optoelectron. Electromagn. Appl.
DATA DE PUBLICAÇÃO
2017-04
RESUMO
Abstract An attempt has been made to present a new device which will function as a highly efficient SDR (Single Drift Region) P+-N- N+ IMPATT diode utilizing the advantages of a junctionless field effect transistor. The basic idea is to convert a uniform N+ region into a (P+-N-N+) structure without any requirement of physical doping. As the present device works on the principle of a junctionless channel, variability and short channel effects are significantly reduced as compared to the conventional TFET though the requirement of an extra gate increases a few fabrication steps. Further, efficiency more than conventional SDR IMPATT diode is achievable without any physical doping.
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